@Alec_tIf you run the post #39 sim for 5mS you get a decaying oscillation. I don't think that's what the TS is expecting.
@AnalogKidI suspected that. If so, then that is not the aspect of real life components that I an referring to. Variations in Vbe have a direct impact on power sharing among paralleled transistors. This is why large power amplifiers have ballast resistors in the emitters of paralleled devices.
One transistor has a slightly smaller Vbe, so it has a slightly higher base current, and collector current, and power dissipation. The higher power dissipation causes more heating (relative to the other device), which decreases its Vbe even more (relative to the other device), which increases its base current, collector current, and power dissipation even more. and on and on.
Now I want to amplify its current upto 100mA amplifying the overall power of the signal
@DD Ki Vines, try circuit below.I actually want to design an AM modulator(Switching modulator) and this oscillator produces the carrier wave.I am planning to use a 1N4148 diode as a switching device,for proper modulation the diode needs to be in linear region that means high current that is why I need about 100mA of current
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by Aaron Carman