I'm just trying to get back in the saddle so to speak when it comes to semiconductor devices. I haven't touched board-level stuff in the better half of a decade. I'd now like to tackle a couple of projects which require that knowledge once again.
At the moment I'm trying to regain my grasp on BJT transistors. NPNs & PNPs. An NPN where current flows into the collector and base and out of the emitter... and a PNP where current flows into the emitter and out of the base and collector... right? Maybe?
Now what's boggling me at this moment is trying to understand whether an NPN would conduct and/or sustain damage if a reverse polarity of say... exactly 100% of it's forward voltage rating were to be applied from emitter to collector. Would this harm anything? What exactly would occur in this sort of situation? Would a diode be necessary to protect the transistor from this reverse polarity or would the second N-P junction serve the function of a diode?

Thanks.
At the moment I'm trying to regain my grasp on BJT transistors. NPNs & PNPs. An NPN where current flows into the collector and base and out of the emitter... and a PNP where current flows into the emitter and out of the base and collector... right? Maybe?
Now what's boggling me at this moment is trying to understand whether an NPN would conduct and/or sustain damage if a reverse polarity of say... exactly 100% of it's forward voltage rating were to be applied from emitter to collector. Would this harm anything? What exactly would occur in this sort of situation? Would a diode be necessary to protect the transistor from this reverse polarity or would the second N-P junction serve the function of a diode?

Thanks.