If you refer to the diagram in post #2, the internal "weak" pullup is represented by a graphic that looks like a European resistor. In the silicon it is fabricated as a MOS transistor with an impedance of about 40K Ohms. When a '1' is written to the latch, the Q*(Q-bar) output will be a zero, and the transistor labeled "N" will be off, disconnecting the pin from GROUND. This lets the "weak" pullup bring the pin to a 'high' state. Remember, this is a "weak" pullup. Any strong current sinking device can pull it 'low'. In this condition the pin and the latch have DIFFERENT values.Hey, Thank you for the explanation,
I still didn't really understand how that can create a difference for pins and D-latchs values, could you please clarify more?
I got you, thank you so much for your amazing explanation, good luck !If you refer to the diagram in post #2, the internal "weak" pullup is represented by a graphic that looks like a European resistor. In the silicon it is fabricated as a MOS transistor with an impedance of about 40K Ohms. When a '1' is written to the latch, the Q*(Q-bar) output will be a zero, and the transistor labeled "N" will be off, disconnecting the pin from GROUND. This lets the "weak" pullup bring the pin to a 'high' state. Remember, this is a "weak" pullup. Any strong current sinking device can pull it 'low'. In this condition the pin and the latch have DIFFERENT values.
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