Hi,
I am currently simulating a 3-phase N-MOS inverter and I would like to build a desat (shoot-through) protection for it. I've already simulated one circuit using a diff amp to measure the vdrop across Rds(on). I was wondering if there is a way to monitor desat for multiple MOSFET at the same time or will I need to place a desat protection circuit for each MOSFET? For example, using six (6) MOSFETs, I'll have to place six protection circuits...is there a way to use less circuit? I've attached a picture from analog.com to help.
Thanks,
-F
I am currently simulating a 3-phase N-MOS inverter and I would like to build a desat (shoot-through) protection for it. I've already simulated one circuit using a diff amp to measure the vdrop across Rds(on). I was wondering if there is a way to monitor desat for multiple MOSFET at the same time or will I need to place a desat protection circuit for each MOSFET? For example, using six (6) MOSFETs, I'll have to place six protection circuits...is there a way to use less circuit? I've attached a picture from analog.com to help.
Thanks,
-F
