I ran it at full output powering resistive load for over 1hr- no issues no overheating, I was using a varac to provide 120vac, as I reduced the supply the 22000uf cap exploded and the igbt blew - not necessarly in that order, what did I miss?HI,
Do you have a specific question regarding the circuit.?
Not that explanation - the circuit is a linear regulator, so it is always working in the linear region.hi hr,
It is possible that by reducing the Vsupply, the Gate voltage became too low to fully switch ON the FET, which would cause overheating.??
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IGBT is rated at 650v @60amp, load was a 90w light bulb so output was no where near 50amp, you think the IGBT was pushed beyond the limit that far?You want 120 VAC rectified and smoothed giving you about 170 VDC. You then drop it to 50 V. The voltage across the IGBT would be 120 V, and the current is 50A, so it would have to dissipate 6 KW. Good luck with that.
Do you think this means that it can pass 60A while dropping 650V, thus dissipating 39KW? If so, think again.IGBT is rated at 650v @60amp
Shouldn't source and drain be emitter and collector, respectively?Remove the input voltage, and the source remains at 56V, the drain goes to 55V, the gate is at 33% of drain voltage which 18V. Voltage between gate and source = -37V.
Of course it is! But it's a MOSFET-y sort of a thing.Shouldn't source and drain be emitter and collector, respectively?
The input side capacitance is ony 54uF and the output side capacitance is 22000uF. The input side is discharged by the potential divider (27k) giving a time constant of 1.4 seconds.Regardless, the gate voltage is a set fraction of the voltage across the set of 6.8uF caps and remains more positive than the emittter (load) voltage as the supply voltage drops.
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