Hey I am working on a synchronous boost converter as shown in the attached image, I am trying to understand the body diode in the high side p channel MOSFET (M3) during ON and OFF time. If I am understanding this right: while M3 is OFF the MOSFET is conducting with a voltage drop equal to the internal body diode, when the MOSFET is turned ON the voltage drop of the junction is equal to Rds(on) provided sufficient gate voltage. So as the MOSFET switches there are two distinct voltage drops as the current ripple is forced through it.
I tried proving this with an N channel MOSFET on the breadboard but was unable to eliminate the .5 voltage drop while reverse conducting and ON, my reasoning concluded (aside from poor wiring) I did not apply enough gate to source voltage because the source sees VCC, OR the diode voltage drop always exists while ON or OFF
Also I'll note I'm just starting with p channel MOSFET.. perhaps my understanding is wrong when applied to P channel?
Thanks
I tried proving this with an N channel MOSFET on the breadboard but was unable to eliminate the .5 voltage drop while reverse conducting and ON, my reasoning concluded (aside from poor wiring) I did not apply enough gate to source voltage because the source sees VCC, OR the diode voltage drop always exists while ON or OFF
Also I'll note I'm just starting with p channel MOSFET.. perhaps my understanding is wrong when applied to P channel?
Thanks
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