Hello.
For silicon PN junction, built-in voltage is ~ 0.7 V. I believe it means voltage measured on the silicon diode without biasing should give us 0.7 V in a way that n is higher than p in voltage.
However, we normally say that forward-bias voltage of silicon diode for good conduction is also ~ 0.7 V. Previously, I simply thought 0.7 V forward-biasing (p is higher than n in voltage) is necessary to suppress original built-in voltage but...if this is right, we have to say that silicon diode starts to conduct when 0 V is across the diode!
There must be something I'm confusing right now.
Another confusion is Shockley diode equation. It looks this equation is widely used however, it doesn't include any built-in potentials for different material. It means, this is only accurate for high voltage across the diode, high enough that built-in voltage is ignorable. Is my conclusion right?
Could you please clarify this?
For silicon PN junction, built-in voltage is ~ 0.7 V. I believe it means voltage measured on the silicon diode without biasing should give us 0.7 V in a way that n is higher than p in voltage.
However, we normally say that forward-bias voltage of silicon diode for good conduction is also ~ 0.7 V. Previously, I simply thought 0.7 V forward-biasing (p is higher than n in voltage) is necessary to suppress original built-in voltage but...if this is right, we have to say that silicon diode starts to conduct when 0 V is across the diode!
There must be something I'm confusing right now.
Another confusion is Shockley diode equation. It looks this equation is widely used however, it doesn't include any built-in potentials for different material. It means, this is only accurate for high voltage across the diode, high enough that built-in voltage is ignorable. Is my conclusion right?
Could you please clarify this?