reflection

I'm building a TDR pulse generator using a single GaN FET (TP65H300G4LSGB) in high-side configuration, driven by NCP51820. The drain is at 40 V, and the source goes through a 50 Ω resistor to GND. Output is taken from the FET source. My Final target is upto 200v. Pulse specs: ~40 V amplitude...

I have the simulation setup as below. A source of data generator with source impedance 35 Ohm. DataRate 5 GHz with rise and fall time specified as below. The characteristic impedance of the line is 60 in this setup which matches the 60 Ohm load impedance. The result voltage at node "V" is...