what is (Emitter-Base Voltage)?

JDT

Joined Feb 12, 2009
657
VBEO is the voltage between the base and the emitter when forward biased, with the collector disconnected.

It will be specified at a certain base current. Normally around 0.65V for most silicon transistors.

VBREBO is the reverse breakdown voltage of the base-emitter junction with the collector disconnected. It will be specified at a certain value of reverse current. Often in the region of 6V for small silicon transistors.
 

Thread Starter

mostafa_gordy

Joined Feb 28, 2012
57
OK JDT....
if more voltage of reverse breakdown voltage of the base-emitter junction is pass of base - emitter junction .... power Transistor is damaged.....? (bux15)

BUX15 NPN 8A Vce =500V P=150w Hfe=15-60 (5 at 8A)
 

ErnieM

Joined Apr 24, 2011
8,377
Believe it or not, no, not at all. Think of it as similar to a zener diode: you normally operate those beyond breakdown but as long as the current is constrained it is fine.

Way back when state of the art switching supplies used transistors it was not uncommon to whack the B-E junction past breakdown to pull current out and get them to turn off a bit faster.
 
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