VCC=10 V.
Rload = 10K ohms.
Zin = > 2K ohms.
Av. = 10
RB1 is the voltage divider resistor from ground to the base of the transistor.
RB2 is the resistor from supply to base, to form a "voltage divider"
Make RC 1/10 Rload = 1Kohms
make RE = 100 ohms. Av. = RC / RE
VC = 5 V.
IC = VC / RC = 5 / 1000 = 5mA.
5mA X RE = VRE = 0.5V.
VBE = 0.7V.
VBE + VRE = VRB1
0.7 + 0.5 = 1.2V. = VRB1
Make RB1 = 2K ohms to satisfy Zin parameter.
ID = divider current = VRB1 / RB1 = 1.2V / 2K = 600 uA.
So RB1 and RB2 form the voltage divider to provide a base voltage of 1.2V.
so that in turn can cause a emitter voltage of 0.5V. wich ultimately determines the amount of collector current that willk flow through the transistor.
Now some checking.
VCC X RB1 / (RB1 + RB2) = 1.17V. = voltage at the base.
1.17V. - 0.7 V. = 0.476V. at the emitter.
so 0.467V / 100 = 4.7mA of collector current, assuming emitter asnd collector current are the same in the calculations.
Hope this is a good example to put with the theories you learned.
I keep rereading your post and think maybe this isn't the example your looking for afterall. I don't know.