The heavy doping in the emitter gives the emitter-base a low approximate 7 V breakdown voltage in small signal transistors.

It should be 0.7 V.
http://www.allaboutcircuits.com/vol_3/chpt_2/8.html

 

When a PN junction is forward biased the current-voltage relationship is an exponential function as described by the Ebers-Moll model. This is not a breakdown condition.

Breakdown occurs when the PN junction is reversed biased and the applied voltage reaches a point where avalanche breakdown occurs.

The 7V breakdown voltage is correct in this case.

 

When a PN junction is forward biased the current-voltage relationship is an exponential function as described by the Ebers-Moll model. This is not a breakdown condition.

Breakdown occurs when the PN junction is reversed biased and the applied voltage reaches a point where avalanche breakdown occurs.

The 7V breakdown voltage is correct in this case.

Oh, I thought it was forward bias. I see my problem. I didn't notice that it stated it was the breakdown voltage. Maybe it could be reworded to:
The heavy doping in the emitter gives the emitter-base a low breakdown voltage of approximate 7 V for small signal transistors.

 

This is what is written:

The heavy doping in the emitter gives the emitter-base a low approximate 7 V breakdown voltage in small signal transistors. The heavily doped emitter makes the emitter-base junction have zener diode like characteristics in reverse bias.

Your wording is slightly better.