Hey everyone, I would like to check to see if my understanding of the ideality factor is correct.
I think the value the ideality factor is close to 1 for the schottky/p-n diode. Am I correct in saying that the surface states (such as the interface between the semiconductor and metal for the schottky diode) are the main cause for an increase in the ideality factor?
Also, does an ideality factor of 2 mean that the recombination of electrons takes longer than for when n=1?
Thanks!
I think the value the ideality factor is close to 1 for the schottky/p-n diode. Am I correct in saying that the surface states (such as the interface between the semiconductor and metal for the schottky diode) are the main cause for an increase in the ideality factor?
Also, does an ideality factor of 2 mean that the recombination of electrons takes longer than for when n=1?
Thanks!