Lecture of datasheet of part IRF520 :
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Drain Source voltage : 100 V
Gate-Source voltage : 20 V
Id (T=25°C) (under Vgs=10 V) 5 A
R DS resistance 0.23 ohm
Problem : I have set my simulation scenarios to transient with 50 periods of pulses of control voltage of the circuit above-left-bottom (V1). The relative low pulse frequency should have no effect on switching losses. In fact, when the simulation results are displayed, the gate command is also a pulse between 1.5V and 12V and Vd=12V, Ids should eventually rise to approx 11V/100 ohm=0.1A but it definitely not goes beyond 1.4 mA. Why ?
absolute maximum ratings :
Drain Source voltage : 100 V
Gate-Source voltage : 20 V
Id (T=25°C) (under Vgs=10 V) 5 A
R DS resistance 0.23 ohm
Problem : I have set my simulation scenarios to transient with 50 periods of pulses of control voltage of the circuit above-left-bottom (V1). The relative low pulse frequency should have no effect on switching losses. In fact, when the simulation results are displayed, the gate command is also a pulse between 1.5V and 12V and Vd=12V, Ids should eventually rise to approx 11V/100 ohm=0.1A but it definitely not goes beyond 1.4 mA. Why ?
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