Hi Guys,I have used the below circuit for swithing a N-channel mosfet and it works. I want to replace the mosfet now with a N-channel IGBT and was wondering if the connection in the diagram would be the same?

 

If the FET or IGBT is being switched rapidly then R1 should have a much lower value.

 

If the FET or IGBT is being switched rapidly then R1 should have a much lower value.

Would you recommend 1k resistor?

 

@Electro007
As alec said, R1 should be much, much smaller (10 ohms). The role of this resistor is to minimize noise (ringing) in other parts of the circuit, since no current is flowing other than to charge the gate capacitance (nano-farads), no limiting is really needed to protect the driver.

Also, I am not sure I understand your drawing completely, is that + and - 12 volts? If so, you have a total of 24 volts going to the gate of the MOSFET? That should be limited to 20V max (preferably 15 v).

 

is that + and - 12 volts?

I read it as only 12V.

 

I read it as only 12V.

Oky, but would the same wiring work on a n-channel igbt?

 

Oky, but would the same wiring work on a n-channel igbt?

yes,You shouldn't need any changes.

 

yes,You shouldn't need any changes.

Thankyou