Surface Accumulation in MOS capacitor

Discussion in 'Homework Help' started by anhnha, Jan 27, 2013.

  1. anhnha

    Thread Starter Well-Known Member

    Apr 19, 2012
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    48
    This is an explain about Surface Accumulation in the link:https://docs.google.com/viewer?a=v&q=cache:R7viF3kRUPoJ:www-mtl.mit.edu/researchgroups/hackman/6152J/SP_2004/supplementals/sp_2005_6_152J_ST04_MOSCap.pdf+%22Surface+Accumulation%22+%22An+applied+positive+gate+voltage+larger%22&hl=vi&gl=vn&pid=bl&srcid=ADGEESgyQWG5RfMEjIoXCQN4bBSzi1iYxd9to61KGdxxIKdFGgu_vyLMX1yq8qcm4tGbXhqo0hYc-Uvy9KyV9aY1fEvax-To6RO9AJunmdaY11mPeYx1KZ4aPfnmlu2g-0_0iqX0BRGR&sig=AHIEtbRfCiyZf3qkRq9SdNTcukBw9lDynQ
    Can anyone tell more about how electrons transfer in surface? Are holes also move in the case?
    And what does "The electron concentration at the surface is above the bulk value" mean here?
    Thank for help.
     
    Last edited: Jan 27, 2013
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