Hi,
I am trying to do some silvaco (ATLAS) simulations for an ultra-violet (UV) sensitive p-i-n diode. I decreased the window layer (p-type), the i layer as the absorption of the UV photons takes place very close to the surface and the n layer as well (because we need a very thin depletion layer for the same reason). I also changed (decreased) the doping of the p layer (therefore Eg increased) trying to filter the low energy photons and let only the high energy UV photons generate e-h pairs (Si). I managed to get a high Spectral responsivity close to 300 nm but it is difficult to go further in the UV, my goal is to reach the area around 200 nm.
Any suggestions on how to do that?
I am trying to do some silvaco (ATLAS) simulations for an ultra-violet (UV) sensitive p-i-n diode. I decreased the window layer (p-type), the i layer as the absorption of the UV photons takes place very close to the surface and the n layer as well (because we need a very thin depletion layer for the same reason). I also changed (decreased) the doping of the p layer (therefore Eg increased) trying to filter the low energy photons and let only the high energy UV photons generate e-h pairs (Si). I managed to get a high Spectral responsivity close to 300 nm but it is difficult to go further in the UV, my goal is to reach the area around 200 nm.
Any suggestions on how to do that?
