Hi Guys.



I am using diode connected bipor junciton transistor to measure temperature. The voltage is measured by the microcontroller.

The temperature is calculated base on T=qΔVbe/(nKln(I1/I2))

n is emission coefficient or ideality factor



There is some temperature difference between actual temperature and measured temperature. The difference is getting bigger at 2 degrees. and no difference lower than 2 degrees

My question is that there is a emisson coefficient on bipor junction transistor. Is this emission coefficent increases with temperterature?

Is there any material that i can read on the temperature effect on transistor on semiconductor physics?

 

This older thread might be useful:

http://forum.allaboutcircuits.com/showthread.php?t=14720

 

Hi, I Want to know how is going on in side bipolar junction transistor related to base emitter depletion region, base width and base collector reverse depletion region


Best Regards

gary