Hello.
In forward bias on PN junction, it is said that depletion zone width is reduced. What is detailed mechanism of this reduction? In this bias, holes in P side and electrons in N side are pushed toward the junction and these carriers are recombined with opposite carriers existed in the zone so width is reduced?
And in sufficient forward bias, current can flow. What is this current? Is this diffusion current by carrier diffusion due to carrier imbalance around the junction or drift current by pushed carriers due to external bias field?
I feed hard to accept 2nd scenario as external field has double plays; the depletion zone reduction and making current.
Please give me details of what is really going on in the biasing.
In forward bias on PN junction, it is said that depletion zone width is reduced. What is detailed mechanism of this reduction? In this bias, holes in P side and electrons in N side are pushed toward the junction and these carriers are recombined with opposite carriers existed in the zone so width is reduced?
And in sufficient forward bias, current can flow. What is this current? Is this diffusion current by carrier diffusion due to carrier imbalance around the junction or drift current by pushed carriers due to external bias field?
I feed hard to accept 2nd scenario as external field has double plays; the depletion zone reduction and making current.
Please give me details of what is really going on in the biasing.