OK, as I understand it from 5 minuets on wikipedia, a solid state hard drive has the general layout of a mosfet, but with a secondary floating gate between the primary gate and the depletion region. When voltage is applied to the gate, it pulls electrons towards it and the floating gate. Fet turns on and the electrons begin flowing through the absence of holes along the oxide. Then, since the electrons are pulled towards the primary gate, some of them... tunnel through the oxide, losing energy and becoming trapped there, keeping a "permanent" voltage on the floating gate.
I have two questions.
1, if the electrons are on the floating gate, wouldn't the voltage be negative, keeping the FET off?.
2, WTF if tunneling?
I know it's Heisenberg uncertainty principle and stuff, and that some electrons can get to the other side by... trading energy for motion or something?
What do they actually do?
slide through the lattice structure?
teleport?

(feel free to move this to physics if you want)
I have two questions.
1, if the electrons are on the floating gate, wouldn't the voltage be negative, keeping the FET off?.
2, WTF if tunneling?
I know it's Heisenberg uncertainty principle and stuff, and that some electrons can get to the other side by... trading energy for motion or something?
What do they actually do?
slide through the lattice structure?
teleport?
(feel free to move this to physics if you want)