I changed the connection of the substrate pin. I also used other models with sub-threshold current parameters. In other words I added leakage transistors.
All information is on the wiring circuit diagram.
One, I am not a teacher.
You can try to calculate the maximum maximum frequency of the memory cell. Cell current at different frequencies of operation.
It is important to use the correct transistor models as well as the parasitic parameters such as drain and source areas and perimeters.