nMOS transistor surface inversion

Discussion in 'Programmer's Corner' started by jayec1a, Apr 18, 2013.

  1. jayec1a

    Thread Starter New Member

    Feb 28, 2012
    I am studying the working of nMOS transistor, where i came across a statement

    "As the Gata bias voltage increases, the Mid-gap energry level goes below the Fermi level which results in the conversion of p-type substrate into n-type"

    Now i am not able to understand the 'midgap level goes below fermi level' part of the statement.

    Note: my reference book is 'CMOS integrated circuits' by Sung-Mo Kang.