I am studying the working of nMOS transistor, where i came across a statement
"As the Gata bias voltage increases, the Mid-gap energry level goes below the Fermi level which results in the conversion of p-type substrate into n-type"
Now i am not able to understand the 'midgap level goes below fermi level' part of the statement.
Note: my reference book is 'CMOS integrated circuits' by Sung-Mo Kang.
"As the Gata bias voltage increases, the Mid-gap energry level goes below the Fermi level which results in the conversion of p-type substrate into n-type"
Now i am not able to understand the 'midgap level goes below fermi level' part of the statement.
Note: my reference book is 'CMOS integrated circuits' by Sung-Mo Kang.
