See figure attached for the question and the figures given.
I'm having a little trouble for part a), I know at point A,
\(v_{GS} = V_{t}\) and the transistor is just turning on, and since \(v_{DS} > 0 \) we will enter saturation.
For point B,
\(v_{GS}  V_{t} = v_{DS}\)
but how do I determine Rd from this? I haven't been told anything about vGS or iD.
Hopefully once I get the ball rolling on part a), parts b), c) & d) should fall into place.
Thanks again!
EDIT:
a) Vgs = Vds + Vt, Vds = 0.6V
\(i_{D} = \frac{1}{2}k_{n}(v_{GS}  V_{t})^{2}\)
\(i_{D} = \frac{V_{DD}  V_{DS}}{R_{D}}\)
\(i_{D} = 1.25mA, \quad R_{D} = 1.6k \Omega\)
b)
\(v_{DS} = 0.5V \quad \rightarrow \quad v_{GS} = 1V\)
\(v_{DS} = 2.5V \quad \rightarrow \quad v_{GS} = 3V\)
I'm stuck on part c) now.
I'm having a little trouble for part a), I know at point A,
\(v_{GS} = V_{t}\) and the transistor is just turning on, and since \(v_{DS} > 0 \) we will enter saturation.
For point B,
\(v_{GS}  V_{t} = v_{DS}\)
but how do I determine Rd from this? I haven't been told anything about vGS or iD.
Hopefully once I get the ball rolling on part a), parts b), c) & d) should fall into place.
Thanks again!
EDIT:
a) Vgs = Vds + Vt, Vds = 0.6V
\(i_{D} = \frac{1}{2}k_{n}(v_{GS}  V_{t})^{2}\)
\(i_{D} = \frac{V_{DD}  V_{DS}}{R_{D}}\)
\(i_{D} = 1.25mA, \quad R_{D} = 1.6k \Omega\)
b)
\(v_{DS} = 0.5V \quad \rightarrow \quad v_{GS} = 1V\)
\(v_{DS} = 2.5V \quad \rightarrow \quad v_{GS} = 3V\)
I'm stuck on part c) now.
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