For semiconductors there is a graph of mobility in cm2/Vs plotted against total impurity concentration Nt in atoms/cm3
My question is why the impurity doping is expressed as total hole concentration and electron concentration added together.
Wouldnt the 'holes' and 'electrons' cancel each other out in a semiconductor?
My question is why the impurity doping is expressed as total hole concentration and electron concentration added together.
Wouldnt the 'holes' and 'electrons' cancel each other out in a semiconductor?