Based on this information:
it will be found that the emitter-base junction possesses a slightly greater forward voltage drop than the collector-base junction. This forward voltage difference is due to the disparity in doping concentration between the emitter and collector regions of the transistor: the emitter is a much more heavily doped piece of semiconductor material than the collector, causing its junction with the base to produce a higher forward voltage drop.
I was wondering if the graphical representation (as used on one of your preceding pages) should rather display the emitter larger than the collector in both PNP as well as NPN or is there another valid reason why you display the collector graphically larger???
it will be found that the emitter-base junction possesses a slightly greater forward voltage drop than the collector-base junction. This forward voltage difference is due to the disparity in doping concentration between the emitter and collector regions of the transistor: the emitter is a much more heavily doped piece of semiconductor material than the collector, causing its junction with the base to produce a higher forward voltage drop.
I was wondering if the graphical representation (as used on one of your preceding pages) should rather display the emitter larger than the collector in both PNP as well as NPN or is there another valid reason why you display the collector graphically larger???