drain-to-Source Breakdown Voltage

Thread Starter

1:1

Joined Jan 25, 2007
27
Hai forum member,

Refer to power MOSFET, what does drain-to-Source Breakdown Voltage mean, and how it effect on selection?


Tokeda
 

beenthere

Joined Apr 20, 2004
15,819
Hi,

That is the maximum voltage the device is designed to withstand. Exceed it, and the FET will break down electrically. So, if you have a circuit that need 80 volts to be switched, don't try it with a 60 volt rated FET.
 

Thread Starter

1:1

Joined Jan 25, 2007
27
Thank beenthere,

It seem sensible enough for me. I have another question need help on it.
My original project are using a single irf7389 HEXFET Power MOSFET (provide by IR), but due to some reason, i change it by using one SUP75P03-07 & SUP45N03-13L (both provide by Vishay). Could anyone help me look thru is that any problem with my changing?

http://www.irf.com/product-info/datasheets/data/irf7389.pdf (Link for irf7389)

http://www.vishay.com/docs/70804/70804.pdf (Link for SUP45N03-13L)

http://www.vishay.com/docs/71109/71109.pdf (Link for SUP75P03-07)

I was struggling on it, really need some one to help.


Thank you,

Tokeda
 

Thread Starter

1:1

Joined Jan 25, 2007
27
I was wonder is there any H-bridge chip are available in the market that able to drive by PWM (microcontroller) instead of using 4 Power MOSFET (2 N-channel & 2- P-channel)to fulfill the same task.

Tokeda
 

Thread Starter

1:1

Joined Jan 25, 2007
27
Thanks mrmeval,

But problem is, the motor is drive by microcontroller ECCP module, imply that have four logic input, so may be the H- bridge show at link above is not particular suitable and the selective motor is drive by 15volt.

Tokeda
 
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