Can anyone explain the concept of charge trapping in flash memory i.e. how it works and how it is more efficient than float gate principle?

 

FLASH memory uses a floating gate to store charge, just like EPROM and EEPROM.

FLASH and EEPROM use FNT to transfer charge. EPROM uses hot electron injection.

Charge trapping is an undesirable defect that causes bit failure. NOR FLASH is EOL after the first bit failure.