characterization of thin films

Thread Starter


Joined Mar 17, 2009
Hi all,
I am currently working on some Barium Strontium Titanate and Aluminum Oxide thin film samples having n-Silicon as the substrate. I have done a voltage sweep from +20V to -20V on the devices with the frequency constant for each sweep. The frequencies that I used are 1 kHz, 1 MHz and 10 MHz. Can anyone tell me how to find out the behavior of the devices in general from the values obtained from the voltage sweep.

Thanks in Advance.