I have been trying to learn alot about MOSFET circuits, and have read many articles, used 3 different books, and have watched several videos, some multiple times, and have even successfully built a couple basic circuits using some MOSFETs I bought, but am still just not fully grasping a few things and hope someone can clear them up. I had similar issues with the BJT and after people helped me on here I have really been doing great with BJTs. My books have less info on Mosfet but do have biasing circuits for JFETs. They don’t really have diagrams or explain important things. I will list the questions I have below with the hopes someone can clear these up. These are regarding enhancement mode mosfets, and I believe I used a power mosfet (IRF520N) for breadboarding and it worked pretty well.
My questions are:
1) I understand that Rds(on) is an important value from the datasheet. What does this actually mean, what region of operation does this apply to, and does this value with respect to any input or output values like VGS or ID?
2) I know in the BJT there is the hfe value that makes it easy to understand the relationship between base and collector currents, and I know the MOSFET used a voltage instead. What is the relationship between the VGS input voltage and the output voltage or current? Is there anything similar to the beta value but for mosfets?
3) Are the biasing configurations the same as for JFETs? For example, self-bias, gate bias, voltage divider bias?
4) What are some important things to consider when using MOSFETs for both switching and amplification purposes?
Hopefully someone can answer these for me, I am sorry if they are dumb questions, but I am definitely missing something in my books and videos, and it will clear alot of things up for me. Sorry for the wordiness. Thanks in advance!
My questions are:
1) I understand that Rds(on) is an important value from the datasheet. What does this actually mean, what region of operation does this apply to, and does this value with respect to any input or output values like VGS or ID?
2) I know in the BJT there is the hfe value that makes it easy to understand the relationship between base and collector currents, and I know the MOSFET used a voltage instead. What is the relationship between the VGS input voltage and the output voltage or current? Is there anything similar to the beta value but for mosfets?
3) Are the biasing configurations the same as for JFETs? For example, self-bias, gate bias, voltage divider bias?
4) What are some important things to consider when using MOSFETs for both switching and amplification purposes?
Hopefully someone can answer these for me, I am sorry if they are dumb questions, but I am definitely missing something in my books and videos, and it will clear alot of things up for me. Sorry for the wordiness. Thanks in advance!