Reference is made to:
http://www.allaboutcircuits.com/vol_3/chpt_2/8.html
(Volume III Semiconductors, Solid State Device Theory, Bipolar Junction Transistors)
The following two paragraphs need correction:
*Paragraph just above the second figure
„Also, few electrons entering the base flow directly through the base to the positive battery terminal. Most of the emitter current of electrons diffuses through the thin base into the collector. Moreover, modulating the small base current produces a larger change in collector current.“
*End of paragraph below the 3rd figure:
„Thus 99% of the emitter current flows into the collector. It is controlled by the base current, which is 1% of the emitter current.“
Correction: Both quoted sections claim - without any proof - that the base current Ib would „produce“ or „control“, respectively, the collector current Ic. These statements are not correct.
A small current can never directly control a larger current.
Instead, the current Ic is controlled by a modulation of the width of the base depletion layer. Thus, it is evident that the base-emitter voltage Vbe controls Ic.
The well-known Ebers-Moll equations show the exponential relationship between both quantities. As a result, the slope of the function Ic=f(Vbe) gives the transconductance gm of the device - a parameter that clearly determines the gain properties of the BJT.
Some references (Stanford University, Berkeley University, W. Hill/co-author „The Art of Electronics“) :
https://ccnet.stanford.edu/cgi-bin/...handout_download&handout_id=ID135726704418707
http://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch8.pdf
http://cr4.globalspec.com/thread/68055/voltage-vs-current
http://www.allaboutcircuits.com/vol_3/chpt_2/8.html
(Volume III Semiconductors, Solid State Device Theory, Bipolar Junction Transistors)
The following two paragraphs need correction:
*Paragraph just above the second figure
„Also, few electrons entering the base flow directly through the base to the positive battery terminal. Most of the emitter current of electrons diffuses through the thin base into the collector. Moreover, modulating the small base current produces a larger change in collector current.“
*End of paragraph below the 3rd figure:
„Thus 99% of the emitter current flows into the collector. It is controlled by the base current, which is 1% of the emitter current.“
Correction: Both quoted sections claim - without any proof - that the base current Ib would „produce“ or „control“, respectively, the collector current Ic. These statements are not correct.
A small current can never directly control a larger current.
Instead, the current Ic is controlled by a modulation of the width of the base depletion layer. Thus, it is evident that the base-emitter voltage Vbe controls Ic.
The well-known Ebers-Moll equations show the exponential relationship between both quantities. As a result, the slope of the function Ic=f(Vbe) gives the transconductance gm of the device - a parameter that clearly determines the gain properties of the BJT.
Some references (Stanford University, Berkeley University, W. Hill/co-author „The Art of Electronics“) :
https://ccnet.stanford.edu/cgi-bin/...handout_download&handout_id=ID135726704418707
http://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch8.pdf
http://cr4.globalspec.com/thread/68055/voltage-vs-current