Hi,
I am working on bjt model. and simulating it on tcad software. i generally want to know about the physics mechanism involved at collector/base and Emitter/base junction? Like diffusion, recombination etc.
Plz help me and with hurry

 

The Wikipedia article on Bipolar Junction Transistors will give you everything you need. It is very well written.

 

I have read the wikipedia site and it dosen't have any physics related mechanisim like drift diffusion surface recombination, avalanche effect etc. It only tell us about the bjt in general. I am asking about specific Physics mechanisim at junction.

 

this one has a bit more: http://ecee.colorado.edu/~bart/book/book/chapter5/ch5_4.htm