Good Day,
I would like to ask that for a three phase Inverter working as an MCU to control a permanent magnet synchronous motor, if we replace IGBTs with SiC MOSFETs, what could be the possible impact of this change on overall control strategy as both devices have different architecture and the most significant difference which is in my mind is the reverse conduction mechanism as in IGBT either there is forward conduction or body diode conduction during dead-time but this reverse conduction of SiC MOSFET has created ambiguity in my mind and at the moment i don't have any clue regarding that.Could anyone here please guide me.
Thanks
I would like to ask that for a three phase Inverter working as an MCU to control a permanent magnet synchronous motor, if we replace IGBTs with SiC MOSFETs, what could be the possible impact of this change on overall control strategy as both devices have different architecture and the most significant difference which is in my mind is the reverse conduction mechanism as in IGBT either there is forward conduction or body diode conduction during dead-time but this reverse conduction of SiC MOSFET has created ambiguity in my mind and at the moment i don't have any clue regarding that.Could anyone here please guide me.
Thanks