I'm wondering if a diode can be connected in parallel with the base/emitter of a transistor so Vfd will maintain the Q Point at exactly the cut off point of the transistor.
However is the forward voltage (Vfd or barrier voltage) across a discrete diode different than the diodes that form transistors? For a discrete silicon diode, Vfd is 0.7 and for germanium, it's 0.3 and the Q Point could be set at cut off simply by using diodes.
However, the doping for transistor diodes is different than for the discrete type and Vfd may be different. Consequently, using diodes to maintain an exact setting may not work.
However is the forward voltage (Vfd or barrier voltage) across a discrete diode different than the diodes that form transistors? For a discrete silicon diode, Vfd is 0.7 and for germanium, it's 0.3 and the Q Point could be set at cut off simply by using diodes.
However, the doping for transistor diodes is different than for the discrete type and Vfd may be different. Consequently, using diodes to maintain an exact setting may not work.