Typos - Insulated Gate FET - Vol 3

Discussion in 'Feedback and Suggestions' started by Unregistered, Feb 25, 2008.

  1. Unregistered

    Thread Starter Guest

    Should this sentence "With no charge on the capacitor, no bias on the gate, the N-type diffusions, the source and gate, remain electrically isolated." not read "With no charge on the capacitor, no bias on the gate, the N-type diffusions, the source and drain, remain electrically isolated."?

    2 paragraphs before the first schematic symbol should be "controls" not "controlls".

    Paragraph before the first schematic, should be "cross-section" not "across-section".

    Derek
     
  2. Dave

    Retired Moderator

    Nov 17, 2003
    6,960
    144
    Hi Derek,

    Thanks for taking the time to give us some feedback.

    See: http://www.allaboutcircuits.com/vol_3/chpt_2/10.html

    Yes you are correct. One would hope the source and gate were electrically isolated in all modes of operation!

    Thanks for the correction.

    Thanks for the correction.

    Dave
     
  3. Dcrunkilton

    E-book Co-ordinator

    Jul 31, 2004
    416
    11
    Thanks Derek for the corrections. They have been entered at ibiblio. You have been listed as Derek@allaboutcircuits.com in Appendix A-2 , Contributors list, in the ibiblio copy. If you wish to be listed under your real name please contact me via a private message.
     
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