Switching an IGBT with pulse unit

Discussion in 'General Electronics Chat' started by Electro007, Jul 14, 2016.

  1. Electro007

    Thread Starter New Member

    Apr 4, 2016
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    Hi Guys,I have used the below circuit for swithing a N-channel mosfet and it works. I want to replace the mosfet now with a N-channel IGBT and was wondering if the connection in the diagram would be the same?
     
  2. Alec_t

    AAC Fanatic!

    Sep 17, 2013
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    If the FET or IGBT is being switched rapidly then R1 should have a much lower value.
     
  3. Electro007

    Thread Starter New Member

    Apr 4, 2016
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    Would you recommend 1k resistor?
     
  4. GopherT

    AAC Fanatic!

    Nov 23, 2012
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    @Electro007
    As alec said, R1 should be much, much smaller (10 ohms). The role of this resistor is to minimize noise (ringing) in other parts of the circuit, since no current is flowing other than to charge the gate capacitance (nano-farads), no limiting is really needed to protect the driver.

    Also, I am not sure I understand your drawing completely, is that + and - 12 volts? If so, you have a total of 24 volts going to the gate of the MOSFET? That should be limited to 20V max (preferably 15 v).
     
  5. #12

    Expert

    Nov 30, 2010
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    I read it as only 12V.
     
  6. Electro007

    Thread Starter New Member

    Apr 4, 2016
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    Oky, but would the same wiring work on a n-channel igbt?
     
  7. GopherT

    AAC Fanatic!

    Nov 23, 2012
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    yes,You shouldn't need any changes.
     
  8. Electro007

    Thread Starter New Member

    Apr 4, 2016
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    Thankyou
     
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