Simulating IGBTs in LTspice

Discussion in 'General Electronics Chat' started by Bigbird, Aug 23, 2013.

  1. Bigbird

    Thread Starter New Member

    Aug 22, 2013
    4
    0
    Hi all,

    I need to simulate an IGBT in LTspice. While I've used LTspice for a while I'm new to adding components to the library. I need to model the FGA180N33ATD from Fairchild Semiconducter. What I've done so far is download the Pspice model from their website and included the .sub file in LTspice library. I'm trying to use the standard NPN transistor component to model the IGBT with. Should I be using another symbol instead of a BJT NPN? I thought I took all the right steps to link the symbol to the .sub file in the library but when I attempt to run a simulation I get:
    "Time step too small"
    I changed my Trtol to 7 as I read that might help with this error but it still will not simulate. I believe the model is incomplete/not setup correctly. Any suggestions?

    Here is the downloaded pspice txt file

    ****************************** IGBT Electrical Parameters ***************************
    ** Product: FGA180N33ATD
    ** 330V, 180A PDP Trench IGBT
    ** Model Format: SPICE2G6
    **-----------------------------------------------------------------------------------
    .SUBCKT FGA180N33ATD C G E
    LE 74 E 1.48n
    RE 83 74 3.07e-4
    RC 85 C 1.20e-3
    RG G 82 1.5
    CGC 82 C 1p
    CGD 92 93 8.08n
    CGE E 82 2.45n
    M1 81 82 83 83 MOS W=1u L=1u
    Q1 83 81 85 VPNP
    R1 92 0 1
    R2 91 94 1
    RLV 95 0 1
    DBE 85 81 DE
    DSD 83 81 DO
    DHV 94 93 DR
    DLV 94 95 DR 13
    D1 91 92 DLIM
    D2 94 0 DLIM
    FFB 82 81 VFB 1
    VFB 93 0 DC 0
    ESD 96 93 POLY(1) 83 81 19 1
    MLV 95 96 93 93 SW
    EGD 91 0 82 81 1
    DFRD E C FRD
    .MODEL SW NMOS
    + LEVEL=3 VTO=0 KP=5
    .MODEL VPNP PNP
    + IS=1.05e-10 NF=1.5 BF=0.0016 CJE=3.6e-8
    + TF=1.09e-8 XTB=1.854 EG=1.181 ISE=3.5e-10
    .MODEL MOS NMOS
    + LEVEL=3 VMAX=3.0e5 THETA=0.0 ETA=5e-3
    + VTO={4.75*{-0.024*TEMP+1.6}} KP={38.0+(TEMP*0.52)}
    .MODEL DR D
    + IS=1.0e-14 CJO=3.0e-10 M=0.56 VJ=0.42
    .MODEL DO D
    + IS=1.0e-14 BV=330 CJO=1.0e-9 M=0.31 VJ=0.58
    .MODEL DE D
    + IS=1.0e-14 BV=30.0 N=2
    .MODEL DLIM D
    + IS=1.00e-7
    .MODEL FRD D
    + IS=2.05e-8 RS=0.0142 EG=1.17 N=1.5
    + CJO=1.318e-9 VJ=0.45 M=0.26
    + FC=0.5 TT=2.75e-8 BV=330 IBV=2.5e-4
    + ISR=1.5e-10 NR=2.0
    .ENDS
    ******************************* IGBT Thermal Parameters ****************************
    ** Package: TO-3P
    **----------------------------------------------------------------------------------
    .SUBCKT FGA180N33ATD_Thermal TH TL
    CTHERM1 TH 6 1.00e-5
    CTHERM2 6 5 2.10e-3
    CTHERM3 5 4 8.80e-3
    CTHERM4 4 3 6.20e-2
    CTHERM5 3 2 9.80e-2
    CTHERM6 2 TL 1.40e-1
    RTHERM1 TH 6 4.00e-4
    RTHERM2 6 5 3.00e-3
    RTHERM3 5 4 2.20e-2
    RTHERM4 4 3 4.80e-2
    RTHERM5 3 2 6.20e-2
    RTHERM6 2 TL 1.85e-1
    .ENDS FGA180N33ATD_Thermal
    **----------------------------------------------------------------------------------
    ** Creation: Feb.-05-2010 Rev.: 0.0
    ** Fairchild Semiconductor
     
  2. Bigbird

    Thread Starter New Member

    Aug 22, 2013
    4
    0
    Any help or suggestions would be appreciated
     
  3. Bigbird

    Thread Starter New Member

    Aug 22, 2013
    4
    0
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