Hello,

I am using Infineon T1401N and D3501N devices (datasheets at end) anti-parallel connected.

To prevent spurious turn-on I am designing a snubber for which I need the reverse recovery characteristics.

After some research I found that reverse recovery of these devices is high as they are not fast acting devices

If total transition time is tt. The time to IRM is roughly tt/3 and recovery time is 2*tt/3

Just wanted to make sure if that makes sense to others as well.

Datasheets:
http://www.infineon.com/dgdl/DS_T14...54c5e&fileId=db3a3043156fd5730115a390fbba08c8

http://www.infineon.com/dgdl/d_3501...54c5e&fileId=db3a304412b407950112b430c33f51d8

 

What is the frequency of the signal going through the diodes?
What is tt?