Reverse Recovery for High Power Press-pack/Hockey puck devices

Discussion in 'Electronics Resources' started by kkumar6, Mar 21, 2013.

  1. kkumar6

    Thread Starter New Member

    Mar 20, 2013
    1
    0
    Hello,

    I am using Infineon T1401N and D3501N devices (datasheets at end) anti-parallel connected.

    To prevent spurious turn-on I am designing a snubber for which I need the reverse recovery characteristics.

    After some research I found that reverse recovery of these devices is high as they are not fast acting devices

    If total transition time is tt. The time to IRM is roughly tt/3 and recovery time is 2*tt/3

    Just wanted to make sure if that makes sense to others as well.

    Datasheets:
    http://www.infineon.com/dgdl/DS_T14...54c5e&fileId=db3a3043156fd5730115a390fbba08c8

    http://www.infineon.com/dgdl/d_3501...54c5e&fileId=db3a304412b407950112b430c33f51d8
     
  2. crutschow

    Expert

    Mar 14, 2008
    13,016
    3,235
    What is the frequency of the signal going through the diodes?
    What is tt?
     
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