PN junction with different doping concentrations

Discussion in 'Feedback and Suggestions' started by SanjKrish, Feb 6, 2011.

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  1. SanjKrish

    Thread Starter Guest

    I have difficulty in understanding the BJT working
    It led me to the doubt

    Suppose if there is a PN junction diode with N heavily doped and P lightly doped and thiner than the N region say..
    and we supply a forward bias voltage to it..

    What will happen:

    Will the heavily doped N inject more amount of electrons in the P region in exchange for the fewer holes from the P side..
    OR
    Will the N region inject exactly the amount of electrons equal to the holes from the P region..

    My intuition says the second one is right, but while understanding the BJT all authors state that since since the base is lightly doped it is very easy for the emitter to flood it with electrons and the excess electrons will pass through the collector...

    Can anyone help with the case of PN junction diode and relate it with BJT
     
  2. Wendy

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