Hello everyone
I have a homework that needs me to calculate the depletion with of a PN junction under applied small forward bias voltage. I have difficulties understanding the units.
The question states that the PN junction is formed from material with 1*10^14 acceptors per cm^3 and 1*10^17 donors per cm^3. The bias applied is +0.4 V.
What I do not understand is the notation cm^-3 and cm^3... What is the difference between these? How can I convert from one to another? Basically, the formula for depletion width uses cm^-3, and I do not understand it at all. I hope you understand my issues...
The formula uses the intrinsic carrier concentration = 1.45*10^10 cm^-3. I have doping concentrations given at atoms per cm^3. Is there a difference? I cannot wrap my head around that. I know what the right answer should be, and I am not getting it.
I would appreciate an explanation. Thanks
I have a homework that needs me to calculate the depletion with of a PN junction under applied small forward bias voltage. I have difficulties understanding the units.
The question states that the PN junction is formed from material with 1*10^14 acceptors per cm^3 and 1*10^17 donors per cm^3. The bias applied is +0.4 V.
What I do not understand is the notation cm^-3 and cm^3... What is the difference between these? How can I convert from one to another? Basically, the formula for depletion width uses cm^-3, and I do not understand it at all. I hope you understand my issues...
The formula uses the intrinsic carrier concentration = 1.45*10^10 cm^-3. I have doping concentrations given at atoms per cm^3. Is there a difference? I cannot wrap my head around that. I know what the right answer should be, and I am not getting it.
I would appreciate an explanation. Thanks