Pinch Off voltage of a MOSFET and electron flow

Discussion in 'Analog & Mixed-Signal Design' started by Babun Pal, Jul 26, 2016.

  1. Babun Pal

    Thread Starter New Member

    Jul 13, 2016

    I have understood that if the Vds of an NMOS is greater than overdrive voltage, the NMOS channel will be pinched off. If we increase the value of Vds, the channel will be more pinched off towards source and hence, the effective channel length will be reduced.
    My question is:
    If the channel is pinched off, how can the electrons from from source to drain for an NMOS? Is it due to the tunneling effect?

    Thank you.