Hi,
I am working on Flyback application and using CoolMos 600V FET.While increasing the Input Voltage(Vin), the input current after exceeding the value of 300mA rushes to 1A that breaks the region and destroys the MOSFETs(Reults in short circuiting of drain to source). However drain to source voltage(on Oscilloscope /Vpp) in this case remains below the breakdown voltage(600V). In my application I need to switch about the breakdown voltage but the MOSFET is being destroyed several times before breakdown voltage. This is the main problem in my applicaton.
Thanks in advance for the suggestions and guidance..
I am working on Flyback application and using CoolMos 600V FET.While increasing the Input Voltage(Vin), the input current after exceeding the value of 300mA rushes to 1A that breaks the region and destroys the MOSFETs(Reults in short circuiting of drain to source). However drain to source voltage(on Oscilloscope /Vpp) in this case remains below the breakdown voltage(600V). In my application I need to switch about the breakdown voltage but the MOSFET is being destroyed several times before breakdown voltage. This is the main problem in my applicaton.
Thanks in advance for the suggestions and guidance..