Any help with the problem below will be much appriciated.

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Consider the process technology for which L= 0.4um, tox= 8nm, un=450cm squared/V*s, and Vth= 0.7V.
A) Find Cox and k'n
B)For the MOSFET with W/L= 8um, calculate the values of VDS(sat), VGS, and VDS needed to operate the transisteor in the saturation region with a dc current ID= 100milliamps.

 

This sounds like a homework problem and should probably have been posted in the Homework Help forum.

What equations are you working with that governs MOSFET behavior? There are a few alternatives that vary slightly, mostly in terms of the symbology used.

 

Thank you WB.