Hi,

What is the voltage drop between the drain and the collector of the IRF630??

I cannot see this specification listed in the datasheet.

 

I think you mean the drain and the source, as the drain is like a collector of a transistor. The difference is dependant on the drain current times the Rds(On resistance) This depends upon the gate to source voltage. The Rds is typically 0.25ohms.

 

IRF630 is a power MOSFET, not a bipolar junction transistor.
There is no collector, only gate, drain and source.
The drain-source ON resistance is 0.4 ohm max.

 

I don't think you will find it quoted?

It does however have a RDS(on) resistance of 0.35R. If you know how much current is flowing through the device then Ohms Law will give you the voltage across it.

or is this too simplistic?

Hope that helps.

 

Hi, thanks for the replies. Why the TIP122 and similar transistors have the 'Collector-Emitter Saturation Voltage' listed while the MOSFETs do not have?

 

So if the current flowwing through a MOSFET with an RDS(on) resistance of 0.35R, is voltage drop is 0.35*2A = 0.7V. Is that how to determine the voltage drop?

 

There are a few manufacturers of the IRF630 with different quoted values for RDS(on) so check that first but your calculation sounds right to me.