Hello.
I've read article that saturation current of the transistor is made when both junction are forward-bias, unlikely to normal operation mode that reverse-forward bias in the order from collector to emitter for NPN transistor.
The name of saturation should mean maximum current. In this "double" forward-bias, current comes from both end of the transistor and goes to...base? I think it should be since for example, after emitter current arrives base, it sees path to the collector is like barrier so should choose to go base. Same also thing happens current coming from collector.
Thus...I'm not confusion which current is saturated? Is base current saturated??
I feels this is not right conclusion but physical imaging lead me to reach this..
please help me to clarify this confusion.
I've read article that saturation current of the transistor is made when both junction are forward-bias, unlikely to normal operation mode that reverse-forward bias in the order from collector to emitter for NPN transistor.
The name of saturation should mean maximum current. In this "double" forward-bias, current comes from both end of the transistor and goes to...base? I think it should be since for example, after emitter current arrives base, it sees path to the collector is like barrier so should choose to go base. Same also thing happens current coming from collector.
Thus...I'm not confusion which current is saturated? Is base current saturated??
I feels this is not right conclusion but physical imaging lead me to reach this..
please help me to clarify this confusion.