Hi
I have read many many articles and write ups on BJT NPN transistor. But one part i am still confused.
I can understand how electrons flow from emitter to base when Vb is > Ve.
But what i can't understand is, for example, for BJT NPN to operate in saturate mode, Vb need to be greater than Vc
If electrons has least barriers from emitter to collector during saturation, how can a higher Vb than Vc (which is a requirement for NPN to operate in saturation mode) make it has less barrier? When Vb is more positive than Vc, how does this help in pushing electrons from base towards collector? Shouldn't it be having a higher Vc than Vb make the electrons move more easily from Base to collector???
I have read many many articles and write ups on BJT NPN transistor. But one part i am still confused.
I can understand how electrons flow from emitter to base when Vb is > Ve.
But what i can't understand is, for example, for BJT NPN to operate in saturate mode, Vb need to be greater than Vc
If electrons has least barriers from emitter to collector during saturation, how can a higher Vb than Vc (which is a requirement for NPN to operate in saturation mode) make it has less barrier? When Vb is more positive than Vc, how does this help in pushing electrons from base towards collector? Shouldn't it be having a higher Vc than Vb make the electrons move more easily from Base to collector???