help me solve

Discussion in 'Homework Help' started by hudson joseph, Jun 19, 2011.

  1. hudson joseph

    Thread Starter New Member

    Jun 19, 2011
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    1)explain the principle po operation of a v-mos power FET using a basic structure.also state some of the advantages.
    2)the gate and substrate region of a uniform-geometry n-channel silicon are equally doped and the dopant density of the channel region is 2*10^22 atoms/M^3.if the channel is 10micrometre long,100micrometre wide,and 1micrometre thick.calculate the theoretical value of the pinch off voltage and the drain crrent at pinch off when gate source voltage is zero.if the channel thickness is reduced by 10% what are the corresponding change in pinch off voltage and the drain souce saturation current when gate souce voltage is zero?
     
  2. MrChips

    Moderator

    Oct 2, 2009
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    Sounds like a Homework question. This site is to help you understand electronics, not to do your homework for you.
     
  3. Kermit2

    AAC Fanatic!

    Feb 5, 2010
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