200^2 x .00005ohms = 2 watts

That's 20 watts, not 2.

Can you please link to me a MOSFET that can conduct 200A and only have an Rds(on) of 0.5 mOhms? The lowest I could find @ 200A is 5 mOhms, which means 200^2*0.005=200W.

http://ixdev.ixys.com/DataSheet/99273.pdf

Considering the fact that you can't blow 200 amps through any single transistor

BJTs are part of IGBTs, which can conduct that much. My point is that for high current applications, the properties of a BJT are far more suited than that of a MOSFET, and that's why hybrid version of the two are used: IGBTs.

The whole point of this argument is that I don't agree with this statement:

but a MOSFET will always beat a bjt at high currents

 

That's 20 watts, not 2.

It is 2 Watts. Time for you to get a new calculator.

Can you please link to me a MOSFET that can conduct 200A and only have an Rds(on) of 0.5 mOhms? The lowest I could find @ 200A is 5 mOhms, which means 200^2*0.005=200W.
#12 said:

let's try 4 transistors in parallel

However, he read the datasheet wrong. The part he is referring to has 200 milliohm Rds(on). Here is a nice, high-current MOSFET module.

BJTs are part of IGBTs, which can conduct that much. My point is that for high current applications, the properties of a BJT are far more suited than that of a MOSFET, and that's why hybrid version of the two are used: IGBTs.

The whole point of this argument is that I don't agree with this statement:

The statement you disagreed with fell off.

I've never used IGBTs, so I won't dispute your opinion.

 

Can you name that point?
Here's a starting point, advertised as .0002 ohms

You misread the datasheet. That part is 200mΩ, not 200μΩ.

 

That's 20 watts, not 2.

It's still less than 360 watts.

Can you please link to me a MOSFET that can conduct 200A and only have an Rds(on) of 0.5 mOhms?

No.

The lowest I could find @ 200A is 5 mOhms, which means 200^2*0.005=200W.

http://ixdev.ixys.com/DataSheet/99273.pdf
This one has an external lead limit of 75A.



BJTs are part of IGBTs, which can conduct that much. My point is that for high current applications, the properties of a BJT are far more suited than that of a MOSFET, and that's why hybrid version of the two are used: IGBTs.

The whole point of this argument is that I don't agree with this statement:

10 characters.

 

You misread the datasheet. That part is 200mΩ, not 200μΩ.

Oops. I found the mistake. It was a typo at the vendors site search engine and I didn't double check by reading the datasheet.