I struggle to understand this, but to no avail so far........
Power dissipation issues:
You need to look at power dissipation when the transistor is saturated. In many datasheets, typical saturation curves are shown where Ib=Ic/10. Basically, you want to stick with that formula; whatever you expect to see as the collector current, provide 1/10 of that for the base current. If you fail to provide enough base current, the transistor will drop out of saturation, and power dissipation in the transistor will increase dramatically.
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Is it not the main function of the transistor (at least in this circuit) to amplify the current? So that I(base) x hFE = I(collector)?
With my very limited understanding I would say it is important to keep the transistor out of saturation, so that the amplification occurs as expected.
What am I missing?
What would it mean if I say: "The power dissipation of the transistor is too high"? Would that be the same as if I said:
"The maximum power rating for the transistor is beeing exceeded"?