Hello
I am an engineering student and i would like to ask a question about the depletion region in mosfets.
Assuming I have a mosfet transistor who's bulk doping and its gate (polysilicon) doping are the same (hypothetical). Is it right to say both in the gate and in the bulk it will be a depletion region with the same deepness?
Thank you very much
Dana
I am an engineering student and i would like to ask a question about the depletion region in mosfets.
Assuming I have a mosfet transistor who's bulk doping and its gate (polysilicon) doping are the same (hypothetical). Is it right to say both in the gate and in the bulk it will be a depletion region with the same deepness?
Thank you very much
Dana