Hi Guys.
I am using diode connected bipor junciton transistor to measure temperature. The voltage is measured by the microcontroller.
The temperature is calculated base on T=qΔVbe/(nKln(I1/I2))
n is emission coefficient or ideality factor
There is some temperature difference between actual temperature and measured temperature. The difference is getting bigger at 2 degrees. and no difference lower than 2 degrees
My question is that there is a emisson coefficient on bipor junction transistor. Is this emission coefficent increases with temperterature?
Is there any material that i can read on the temperature effect on transistor on semiconductor physics?
I am using diode connected bipor junciton transistor to measure temperature. The voltage is measured by the microcontroller.
The temperature is calculated base on T=qΔVbe/(nKln(I1/I2))
n is emission coefficient or ideality factor
There is some temperature difference between actual temperature and measured temperature. The difference is getting bigger at 2 degrees. and no difference lower than 2 degrees
My question is that there is a emisson coefficient on bipor junction transistor. Is this emission coefficent increases with temperterature?
Is there any material that i can read on the temperature effect on transistor on semiconductor physics?