if one do a resistance test for forward and reverse biasing on a Silicon and a Germanium diode the result is that the ratio of reverse/forward is much bigger for Silicon than for Germanium. The question is Why?
I have done some reading on the two diode and found that germanium diode has a bigger leakage current than Silicon diodes. My theory for this is that Germanium valence electrons are at a higher level of energy.
Can someone please assist in this matter?
I have done some reading on the two diode and found that germanium diode has a bigger leakage current than Silicon diodes. My theory for this is that Germanium valence electrons are at a higher level of energy.
Can someone please assist in this matter?